Silicon carbide single-crystal semiconductor materials possess outstanding physical properties such as a wide bandgap, high thermal conductivity, high breakdown field strength, and high saturation electron drift velocity. They are widely used in electric vehicles, smart grids, photovoltaic energy storage, rail transportation, and other fields, serving as a core foundational material for future digital and low-carbon industries. Particularly in high-voltage and high-power applications above 10kV, P-type silicon carbide materials hold greater application potential.
Technology Leadership Facilitates Low-Carbon Smart Grids
Recently, SICC successfully delivered high-quality, low-resistance P-type silicon carbide substrates to its customers, marking a significant step forward into higher-voltage applications represented by smart grids. These high-quality, low-resistance P-type silicon carbide substrates will greatly accelerate the development process of high-performance SiC-IGBTs and achieve the localization of high-end ultra-high voltage power devices.
In response to the technical challenges faced by P-type silicon carbide single crystal substrates for high-voltage and high-power power electronic devices, such as high cost, high resistivity, and difficulty in defect control, SICC has deepened its layout in forward-looking technologies. In the highly regarded liquid-phase method field, following the announcement of the world's first 8-inch silicon carbide crystal in 2023, it has achieved another significant breakthrough in 2024, launching a 4-degree off-axis P-type silicon carbide substrate prepared by the liquid-phase method.
The liquid-phase method has the advantage of growing high-quality crystals, and its crystal growth principle determines that it can grow ultra-high-quality silicon carbide crystals. SICC has been laying out the liquid-phase method for many years and has currently obtained silicon carbide crystals with low threading dislocations and zero stacking faults in this field. The P-type 4-degree off-axis silicon carbide substrates prepared by the liquid-phase method have a resistivity of less than 200 mΩ·cm, a uniform in-plane resistivity distribution, and good crystallinity.
SICC's n-type products have the second-highest global market share, and its high-purity semi-insulating silicon carbide substrates have ranked third in global market share for five consecutive years. In 2023, the company signed long-term cooperation agreements with well-known downstream power device and automotive electronics enterprises such as Infineon and Bosch. The conductive n-type silicon carbide substrates have obvious advantages in high-power power devices and outstanding advantages in the electric vehicle field. SICC's automotive-grade products have been recognized by international customers, achieving batch sales of 6-inch and 8-inch conductive silicon carbide substrates. The high-purity semi-insulating silicon carbide substrates provide a material quality foundation for high-frequency and high-output RF devices and are suitable for applications such as 5G base station RF devices and satellite communications.
SICC adheres to the concept of intelligent manufacturing, fulfills social responsibilities with technological strength, and relies on its leading advantages in technology, production capacity, service, and concept. It continuously increases R&D investment to achieve technological improvement, and is committed to providing customers with high-quality substrate materials to meet the highest security requirements of chips. It uses industrial experience to ensure the development of the silicon carbide power semiconductor industry to new heights and contributes to green, low-carbon, and high-quality development.
